Multifunctional materials
for microwave and millimeter wave applications - MATMIUM
Funding agency: CEEX – CERES, Project 4/4 -
2005
Coordinator - “Politehnica” University, Project manager:Dr.
Eng. Sorin Jinga
Partners:
INCDFM, Magurele, Partner project manager: Dr. Andrei Ioachim
INFLPR, Magurele, Partner project manager: Dr. Bogdan Mandache
Bucharest University, Faculty of Physics, Partner project manager:
prof. dr. Stefan Antohe
INOE 2000 –Magurele, Partner project manager: Dr. Viorel Braic
METAV CD, Partner project manager: Dr. Vasile Eugen
ARMTECH SA, Curtea de Arges, Partner project manager: Eng. Georgeta Stoica
Objective
BZT
compounds for microwave and millimeter wave applications
Specific objectives for INOE 2000:
v BZT coatings suitable for microwave and millimeter
wave applications
Results:
BZT
target manufactured for magnetron deposition system. - Deposition
method: magnetron sputtering
- Optimization
of the cathode composition
|
Cathode |
K1 - Stoichiometric BZT |
K2 – non-stoichiometric BZT (Ba 50%at.,Ta30% at.,Zn20% at.) |
K3 – non-stoichiometric BZT (Ba50% at.,Ta20% at.,Zn30% at.) |
||||||
|
RF Power on magnetron (W) |
30 |
50 |
100 |
30 |
50 |
100 |
30 |
50 |
100 |
|
Power density (W/cm2) |
5.92 |
9.87 |
19.74 |
5.92 |
9.87 |
19.74 |
5.92 |
9.87 |
19.74 |
|
Rata depunere (A/min) |
- |
9 |
18 |
4 |
8 |
- |
4 |
8 |
- |
EDX
spectrum of the BZT film Diffractogram
of BZT film deposited from K1 @ 5000C on alumina substrate after
annealing
Diffractogram
of BZT film deposited @ 4600C on Pt/Si substrate, before and after
annealing
Au electrodes deposited on a BZT film on
Si/Pt substrate
Image
of the deposition of a BZT film in the magnetron deposition system.
Capacity variation vs temperature of films deposited on
Pt/Si substrate from K3 cathode, after annealing in air at 8000C,
t=1 h
Variation of the dielectric constant of BZT
film (K3, 8000C, t=1 h) vs frequency.
|
Dielectric constant |
23 |
22.5 |
21.4 |
19.8 |
|
Frequency (kHZ) |
1 |
10 |
100 |
1000 |
• BZT thin films were prepared by RF
magnetron sputtering. Three type of BZT target with
different composition and preparation were utilised in this experiment.
• Good results from point of view
structural properties were obtained with the K3 target, where the elemental
raport was Ba/Zn/Ta = 50/30/20.
• The dielectric measurement data
demonstrate the potential of the annealed BZT films (K3) grown on Pt/Si for
applications in electronics.
- Presentation
at international conferences
1.
Characterization of
BaZn1/3Ta2/3O3 thin films obtained by rf pulsed laser and rf magnetron
sputtering deposition methods, L.Nedelcu, A.Ioachim,
M.I.Toacsan, M.G. Banciu, V.Braic, A.Kiss, M.Braic, M.Dinescu, N.Scarisoreanu,
M.Dumitru, S.Jinga, E.Andronescu, E-MRS-Spring 2007, Strasburg, France.
2.
RF magnetron sputtering synthesis
of BZT thin films, A. Ioachim, L. Nedelcu, M. I. Toacsan, M.G. Banciu, A.M.
Vlaicu (National Institute for Material Physics, Bucharest-Magurele, Romania),
V. Braic, A.Kiss, C. N. Zoita, M. Braic (National
Institute for Optoelectronics, Bucharest-Magurele, Romania), E. Andronescu, S.
Jinga (Politehnica University of Bucharest, Faculty of Chemistry, Bucharest,
Romania),
C.
Berbecaru, H.V. Alexandru (University of Bucharest, Faculty of Physics,
Bucharest, Romania), IBWAP 2007, Constanta.